Mitsubishi Electric has announced that it will begin shipping samples of a new HV100 dual-type X-Series high-voltage insulated gate bipolar transistor (HVIGBT) module on May 31st, offering superior power, efficiency and reliability in inverter systems for large industrial equipment such as railways and electric power systems. The dual-type module, which achieves 4.5kV withstand voltage and 10.2kVrms dielectric strength, is rated at 450A, which is believed to be unmatched among 4.5kV silicon HVIGBT modules.
Product Features
1) Industry-leading current rating for higher output and more efficiency in inverters
The module’s current rating of 450A, unsurpassed among 4.5kV dual-type modules, will help to increase
the output and efficiency of inverter systems.
The seventh-generation IGBTs adopt the CSTBTTM structure and the diodes adopt Relaxed Field of
Cathode (RFC) technology, both proprietary technologies that have been optimized to balance high
withstand voltage operation and low power loss.
Optimized wiring between the main P-N terminals reduces internal inductance for faster switching and
lower power loss.
2) Optimized terminal layout suited to various inverter configurations and capacities
Optimized terminal layout enables parallel connection and supports various inverter configurations
and capacities depending on the number of parallel connections.
The package structure, which arranges DC and AC main terminals in opposite poles, helps to simplify
circuit design.
3) Reduced thermal resistance contributes to inverter system reliability
Integration of the insulating plate and base plate reduces thermal resistance between the junction and
the case to help extend the thermal cycle life.
The base plate’s uniform flatness and the power semiconductor chip’s heat dissipation reduce the
contact thermal resistance between the case and the heat sink to further extend the thermal cycle life.
